| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same. <P>SOLUTION: A semiconductor device includes a first semiconductor element having PN junction, a second semiconductor element having PN junction, and a circuit including the first semiconductor element and the second semiconductor element as constituent elements, and an addition signal in which a first forward voltage generated in the PN junction of the first semiconductor element and a second forward voltage generated in the PN junction of the second semiconductor element are added is output from the circuit. In the semiconductor device, the first semiconductor element and the second semiconductor element are in serial connection, and at actual use temperature regions respectively of the first semiconductor element and the second semiconductor element, a temperature characteristic of a first signal output from the circuit when the circuit does not include the second semiconductor element as the constituent element and a temperature characteristic of a second signal output from the circuit when the circuit does not include the first semiconductor device are inverted. <P>COPYRIGHT: (C)2012,JPO&INPIT |
