发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method of fabricating a semiconductor device includes sequentially forming a first gate insulating layer and a second gate insulating layer on a substrate, implanting impurity ions into the substrate and performing a first thermal process for activating the impurity ions to form a source and drain region, and forming a third gate insulating layer on the substrate after the first thermal process has been completed.
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申请公布号 |
US2012100684(A1) |
申请公布日期 |
2012.04.26 |
申请号 |
US201113280430 |
申请日期 |
2011.10.25 |
申请人 |
MIN JI-YOUNG;SHIN YU-GYUN;NAM GAB-JIN;KIM YOUNG-PIL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MIN JI-YOUNG;SHIN YU-GYUN;NAM GAB-JIN;KIM YOUNG-PIL |
分类号 |
H01L21/336;B82Y40/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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