发明名称 |
MEMORY ARRAY WITH METAL-INSULATOR TRANSITION SWITCHING DEVICES |
摘要 |
A memory array with Metal-Insulator Transition (MIT) switching devices includes a set of row lines intersecting a set of column lines and a memory element disposed at an intersection between one of the row lines and one of the column lines. The memory element includes a switching layer in series with an MIT material. A method of accessing a target memory element within a memory array includes applying half of an access voltage to a row line connected to the target memory element, the target memory element comprising a switching layer in series with an MIT material, and applying an inverted half of the access voltage to a column line connected to the target memory element. |
申请公布号 |
US2012099362(A1) |
申请公布日期 |
2012.04.26 |
申请号 |
US20100911283 |
申请日期 |
2010.10.25 |
申请人 |
RIBEIRO GILBERTO MEDEIROS;PICKETT MATTHEW D.;YANG JIANHUA |
发明人 |
RIBEIRO GILBERTO MEDEIROS;PICKETT MATTHEW D.;YANG JIANHUA |
分类号 |
G11C11/34;G11C7/00;H01L45/00 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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