发明名称 METAL-INSULATOR TRANSITION SWITCHING DEVICES
摘要 <p>A metal-insulator transition switching device (100) includes a first electrode (120) and a second electrode (125). A channel region (115) which includes a bulk metal-insulator transition material separates the first electrode (120) and the second electrode (125). A method for forming a metal-insulator transition switching device (200) includes depositing a layer of bulk metal-insulator transition material (245) in between a first electrode (220) and a second electrode (225) to form a channel region (115) and forming a gate electrode (210) operatively connected to the channel region (115).</p>
申请公布号 WO2012054041(A1) 申请公布日期 2012.04.26
申请号 WO2010US53549 申请日期 2010.10.21
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;PICKETT, MATTHEW D.;KUEKES, PHILIP J.;WILLIAMS, R. STANLEY;PERNER, FREDERICK;WU, WEI;BRATKOVSKI, ALEXANDRE M. 发明人 PICKETT, MATTHEW D.;KUEKES, PHILIP J.;WILLIAMS, R. STANLEY;PERNER, FREDERICK;WU, WEI;BRATKOVSKI, ALEXANDRE M.
分类号 H01L21/336;H01L29/78 主分类号 H01L21/336
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