GROUP-III-NITRIDE SEMICONDUCTOR ELEMENT, MULTI-WAVELENGTH-EMITTING GROUP-III-NITRIDE SEMICONDUCTOR LAYER, AND METHOD FOR FORMING MULTI-WAVELENGTH-EMITTING GROUP-III-NITRIDE SEMICONDUCTOR LAYER

摘要

A group-III-nitride semiconductor element includes: a substrate; and a group-III-nitride semiconductor layer formed on the substrate, having donor impurities and acceptor impurities added thereto, and containing gallium (element symbol: Ga) as an essential constituent element thereof. The group-III-nitride semiconductor element is characterized in that the group-III-nitride semiconductor layer includes a multi-wavelength-emitting group-III-nitride semiconductor monolayer that contains a greater stoichiometric amount of group III elements including gallium than group V elements including nitrogen and that simultaneously emits at least three beams of light aside from the band-edge emission and having different wavelengths in a region with wavelengths longer than the band-edge emission. Thus, a semiconductor element, such as a white LED, is provided easily and with a simple structure.