| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture an oxide semiconductor film having excellent crystallinity. <P>SOLUTION: When forming an oxide semiconductor film, a substrate is heated at a first temperature or more and less than a second temperature, while only a portion of the substrate having a typical length from 1 nm to 1 μm is heated to the second temperature or more. Here, the first temperature is a temperature at which crystallization occurs with some stimulation and the second temperature is a temperature at which crystallization spontaneously occurs without any stimulation. Additionally, the typical length is a square root of a value obtained by dividing an area thereof by the circumference ratio. <P>COPYRIGHT: (C)2012,JPO&INPIT |
