| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve space saving in a semiconductor device. <P>SOLUTION: A peripheral circuit region S provided with a sense amplifier and a memory cell region M are partitioned and formed in a semiconductor substrate 5. In the memory cell region M, a buried word line 9 containing a gate electrode and a buried insulating film positioned thereon are embedded into a trench groove formed on one surface of the semiconductor substrate 5 with a gate insulating film interposed therebetween. An impurity diffusion layer is formed in the surface region of one surface of the semiconductor substrate 5, which is adjacent to the trench groove, and a bit wiring 15 is formed on the region where the impurity diffusion layer is formed. The bit wiring 15 is extended to the peripheral circuit region S, and the bit wiring 15 is used as a gate electrode G of an MOS transistor constituting the sense amplifier in the peripheral circuit region S. <P>COPYRIGHT: (C)2012,JPO&INPIT |
