| 摘要 |
<P>PROBLEM TO BE SOLVED: To neutralize adverse effect of the boundary surface charges in an insulation layer such as an oxide film in an edge termination structure for a silicon carbide device, and to reduce or eliminate the impact on the change of oxide film charges in a multiple floating guard ring termination. <P>SOLUTION: An edge termination structure for a silicon carbide device has a plurality of concentric circle floating guard rings in a silicon carbide layer, the floating guard rings neighboring to and being spaced apart from a silicon carbide-based semiconductor junction. An insulation layer such as an oxide film is provided on these floating guard rings, and a silicon carbide surface charge compensation region is provided between these floating guard rings and is adjacent to the insulation layer. A method of fabricating the edge termination structure is also provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
