| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a highly reliable semiconductor device easily and surely, which reduces increase in cost by using conventional appliances and processing processes as much as possible and processes, as desired, a conductive material containing Ta without creating residual deposit hard to be removed. <P>SOLUTION: A Ta contained layer, a TiN layer and a layer such as a polycrystalline silicon film capable of dry etching are sequentially laminated on a semiconductor substrate. The polycrystalline silicon film is dry etched by using the TiN layer as an etching stopper so as to leave a predetermined shape. The TiN layer and the Ta contained layer are wet etched by using SPM, APM or the like so as to leave a predetermined shape under the polycrystalline film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
