发明名称 |
PLASMA CVD FILM-FORMING APPARATUS, FILM-FORMING METHOD, GAS-BARRIER LAMINATED FILM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma CVD film-forming apparatus capable of performing static elimination in a suitable position in order to perform plasma CVD film-forming excellently. <P>SOLUTION: The plasma CVD film-forming apparatus 1 which continuously forms a film on a base material 100 while continuously conveying the long base material 100 is provided with: a first film-forming roll 61 wrapping and conveying the base material 100; a second film-forming roll 62 arranged opposite to the first film-forming roll 61; and a static eliminator eliminating static electricity charged on a film-forming surface 100a, wherein the film-forming surface 100a of the base material is a surface that faces the second film-forming roll 62 of the base material 100 wrapped on the first film-forming roll 61. A gap between the first film-forming roll 61 and the second film forming roll 62 is a film-forming space where plasma CVD film-forming is performed on the film-forming surface 100a, and the static eliminator includes a first static eliminator 81 arranged upstream of the film-forming space in a conveying direction of the base material 100. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012082464(A) |
申请公布日期 |
2012.04.26 |
申请号 |
JP20100228918 |
申请日期 |
2010.10.08 |
申请人 |
SUMITOMO CHEMICAL CO LTD |
发明人 |
YAMASHITA TAKAHIRO;KURODA TOSHIYA;SANADA TAKASHI |
分类号 |
C23C16/54;B32B9/00;C23C14/08 |
主分类号 |
C23C16/54 |
代理机构 |
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