ELECTRICAL CONTACT FOR A DEEP BURIED LAYER IN A SEMI-CONDUCTOR DEVICE

摘要

A semi-conductor device includes at least one deep buried layer with an electrical connection made thereto by an electrical contact. The electrical contact to the deep buried layer is made by formed an opening through the use of a first chemical attack and a second chemical attack after the first chemical attack. By making an opening, the electrical contact can be made with the deep buried layer without at the same time occupying excessively wide portions of the device. For example, it is possible to make electrical contacts having a width of less than 1.5μm with deep layers having a depth of more than 5μm.