发明名称 SEMICONDUCTOR DEVICE CAPACITORS INCLUDING MULTILAYERED LOWER ELECTRODES
摘要 A capacitor of a semiconductor device may include a lower electrode on a semiconductor substrate. A dielectric film can cover a surface of the lower electrode and an upper electrode can cover the dielectric film. The lower electrode can be a first conductive pattern that includes a bottom portion and a sidewall portion that defines a groove region. A core support pattern can be in the groove region of the first conductive pattern and a second conductive pattern can electrically connect to the first conductive pattern on the core support pattern.
申请公布号 US2012098092(A1) 申请公布日期 2012.04.26
申请号 US201113271821 申请日期 2011.10.12
申请人 PARK DONGKYUN;CHEONG SEONGHWEE;KANG MANSUG;KIM TAEKYUN;PARK HEESOOK;SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK DONGKYUN;CHEONG SEONGHWEE;KANG MANSUG;KIM TAEKYUN;PARK HEESOOK
分类号 H01L29/92;H01L23/48 主分类号 H01L29/92
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