发明名称 |
SEMICONDUCTOR DEVICE CAPACITORS INCLUDING MULTILAYERED LOWER ELECTRODES |
摘要 |
A capacitor of a semiconductor device may include a lower electrode on a semiconductor substrate. A dielectric film can cover a surface of the lower electrode and an upper electrode can cover the dielectric film. The lower electrode can be a first conductive pattern that includes a bottom portion and a sidewall portion that defines a groove region. A core support pattern can be in the groove region of the first conductive pattern and a second conductive pattern can electrically connect to the first conductive pattern on the core support pattern.
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申请公布号 |
US2012098092(A1) |
申请公布日期 |
2012.04.26 |
申请号 |
US201113271821 |
申请日期 |
2011.10.12 |
申请人 |
PARK DONGKYUN;CHEONG SEONGHWEE;KANG MANSUG;KIM TAEKYUN;PARK HEESOOK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK DONGKYUN;CHEONG SEONGHWEE;KANG MANSUG;KIM TAEKYUN;PARK HEESOOK |
分类号 |
H01L29/92;H01L23/48 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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