发明名称 MODULATING IMPLANTATION FOR IMPROVED WORKPIECE SPLITTING
摘要 A first species is implanted into an entire surface of a workpiece and helium is implanted into this entire surface with a non-uniform dose. The first species may be, for example, hydrogen, helium, or nitrogen. The helium has a higher dose at a portion of a periphery of the workpiece. When the workpiece is split, this split is initiated at the periphery with the higher dose. The non-uniform dose may be formed by altering a scan speed of the workpiece or an ion beam current of the helium. In one instance, the non-uniform dose of the helium is larger than a uniform dose of the hydrogen.
申请公布号 US2012097868(A1) 申请公布日期 2012.04.26
申请号 US20100909225 申请日期 2010.10.21
申请人 DICKERSON GARY E.;BLAKE JULIAN G.;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 DICKERSON GARY E.;BLAKE JULIAN G.
分类号 B29C59/16 主分类号 B29C59/16
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