| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing polycfrystalline silicon which prevents contaminations from materials such as an electrode unit and can sufficiently ensure the yield of the collected silicon in the collection after depositing polycrystalline silicon. <P>SOLUTION: The method for manufacturing polycfrystalline silicon wherein the polycrystalline silicon is deposited on a surfaces of silicon core rod by bringing a raw material gas into contact with the silicon core rod being heated and vertically standing in a reaction furnace comprises inserting a lower part of the silicon core rod into a holding hole formed an upper part of a core rod holding part composed of a conductive material, providing a fixing means for pressing and fixing the inserted the silicon core rod to an inner surface of the holding hole so that a part of the inserted the silicon core rods is projected from an outside surface of the core rod holding part, depositing the polycfrystalline silicon into the surface of the silicon core rod, and cutting the polycfrystalline silicon with the silicon core rod in the upper part higher above than a projected part of the polycfrystalline silicon which is formed depending on the shape of the fixing means. <P>COPYRIGHT: (C)2012,JPO&INPIT |
