| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can inhibit reduction of current detection accuracy. <P>SOLUTION: A gate electrode of a main Tr2 and a gate electrode of a sense Tr3 are connected to a common gate terminal which applies a gate voltage. And, a gate potential from the gate terminal is directly applied to the sense Tr3 while a potential obtained from dividing the gate potential by a first and a second resistances 31, 32 is applied to the main Tr2 such that a gate-source voltage of the main Tr2 and a gate-source voltage of the sense Tr3 become equal to each other. <P>COPYRIGHT: (C)2012,JPO&INPIT |
