ABRASIVE, CONCENTRATED 1-LIQUID SYSTEM ABRASIVE, 2-LIQUID SYSTEM ABRASIVE, AND SUBSTRATE POLISHING METHOD

摘要

PROBLEM TO BE SOLVED: To provide: an abrasive, for CMP of a film to be polished such as a silicon oxide system insulator film, capable of polishing a film to be polished to high flatness while suppressing polishing scratches; concentrated 1-liquid system and 2-liquid system abrasives to obtain the abrasive; and a polishing method using the abrasive.

SOLUTION: The abrasive contains: tetravalent metal hydroxide particles; cationizing polyvinyl alcohol; at least one kind of saccharide selected from a group composed of amino sugar, derivatives of the amino sugar, polysaccharide having amino sugar and derivatives of the polysaccharide; acid component; and water. The substrate polishing method is provided with a process to polish a silicon oxide film 2 by supplying the abrasive between a silicon oxide film (a film to be polished) 2 formed on a silicone substrate 1 and a polish pad.

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