| 摘要 |
<P>PROBLEM TO BE SOLVED: To secure the functionality of atmosphere separation between processing regions by an isolation region, while also restricting the consumption of a separation gas supplied to the isolation region. <P>SOLUTION: When a turntable 2 is rotated in a vacuum vessel 1 in order for a wafer W to pass through processing regions P1 and P2 sequentially via an isolation region D, an arrangement interval u of gas discharge holes 33 in separation gas nozzles 41 and 42 is set to be wider on the central side than on the peripheral side of the turntable 2 to ensure that the fed amount of a separation gas will be greater on the peripheral side than on the central side, and also the flow velocity of a separation gas discharged from the isolation region D to the processing regions P1 and P2 is set to be slightly faster than the maximum peripheral velocity of the turntable 2 in each of regions A1 and A2, respectively. <P>COPYRIGHT: (C)2012,JPO&INPIT |
