| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high output diamond electronic element having a drift layer with reduced defect density. <P>SOLUTION: The diamond electronic element comprises: a drift layer composed of a diamond semiconductor; a structure retainer having a semi-insulating diamond layer; and a contact layer composed of the diamond semiconductor. The structure retainer has an opening and is laminated on one side of the drift layer while the contact layer is directly laminated on the drift layer in the opening. An anode electrode is provided on the contact layer in the opening and a cathode electrode is provided on the other side of the drift layer to realize, for example, a Schottky barrier diode. After a defect layer is formed on one substrate surface of a single crystal diamond substrate, the drift layer is deposited on the substrate surface, and the structure retainer having the opening is formed by selectively growing the semi-insulating diamond layer, and the substrate is separated from an element part by a smart cut method. <P>COPYRIGHT: (C)2012,JPO&INPIT |
