| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
<p>Disclosed is a semiconductor device which is provided with a GaN layer (2), an anode electrode (4) formed by a Schottky junction on the Ga surface of the GaN layer (2), and an InGaN layer (3), which is positioned between at least a part of the anode electrode (4) and the GaN layer (2).</p> |
| 申请公布号 |
WO2012053071(A1) |
申请公布日期 |
2012.04.26 |
| 申请号 |
WO2010JP68466 |
申请日期 |
2010.10.20 |
| 申请人 |
FUJITSU LIMITED;OKAMOTO, NAOYA;MINOURA, YUICHI |
发明人 |
OKAMOTO, NAOYA;MINOURA, YUICHI |
| 分类号 |
H01L29/47;H01L21/338;H01L21/8232;H01L27/06;H01L29/778;H01L29/812;H01L29/872 |
主分类号 |
H01L29/47 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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