| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having the small number of masks required and a simplified process. <P>SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a gate electrode; stacking a gate insulating film, a semiconductor film, an impurity semiconductor film, and a conductive film in this order so as to cover the gate electrode; forming a source electrode and a drain electrode by processing the conductive film; forming a source region and a drain region by processing the upper portion of the semiconductor film and forming a semiconductor layer in which an upper portion of a portion not overlapping with the source region and the drain region is removed, while separating the impurity semiconductor film; forming a passivation film on the gate insulating film, the semiconductor layer, the source region and the drain region, and the source electrode and the drain electrode; forming an etching mask on the passivation film; processing at least the passivation film and the semiconductor layer into an island shape while forming an opening that reaches the source electrode and the drain electrode with the etching mask; removing the etching mask; and forming a pixel electrode on the gate insulating film and the passivation film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
