发明名称 CURRENT DETECTION CIRCUIT OF POWER SEMICONDUCTOR DEVICE AND DETECTION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a current detection circuit of a power semiconductor device having a small size and low loss by detecting current using a sense function of the power semiconductor device, and to provide a detection method. <P>SOLUTION: Known current is applied to a main region of a power semiconductor element (1), and current detection means (21) connected to a sense terminal S of the power semiconductor device detects the current. A variable voltage source circuit (22) detects a difference in properties between the main region and a sense region based on the detected current, and an output adjuster (221) adjusts an amount of offset and an amount of gain so as to match both the properties. In this case, an amount of offset and an amount of gain to be adjusted are supplied in serial or parallel to the output adjuster (221) from a CPU(3) provided on the outside. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012085407(A) 申请公布日期 2012.04.26
申请号 JP20100228103 申请日期 2010.10.08
申请人 FUJI ELECTRIC CO LTD 发明人 UEMURA HIROFUMI
分类号 H02M7/48;G01R19/00;H02M3/155 主分类号 H02M7/48
代理机构 代理人
主权项
地址