| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a field-effect transistor in which thermal resistance is prevented from increasing due to concentrated arrangement of heat generation regions, and the heat generation regions are distributed without increasing the chip area. <P>SOLUTION: In the field-effect transistor, a plurality of gate finger electrodes of unit FETs are collected as one cell 11, and the finger electrodes are arranged in parallel in the longitudinal direction of a chip. In the gap between each cell 11, source electrode wiring 13 with a via hole 12 connected with a source finger electrode 13a, and a gate electrode wiring 14 connected with a gate finger electrode 14a are arranged in view of the symmetry. Each gate electrode wiring 14 is connected with a gate bus line 17. <P>COPYRIGHT: (C)2012,JPO&INPIT |
