| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a reduction in conversion efficiency due to an increase in resistance of a semiconductor device. <P>SOLUTION: A semiconductor device comprises a first transistor Q1 having a GaN-based semiconductor stacked structure 3 and a second transistor Q2 having a GaN-based semiconductor stacked structure on a substrate 2. The first transistor comprises a first gate electrode 8A having a plurality of first fingers 8AX, a plurality of first drain electrodes 9A, and a plurality of first source electrodes 10A. The second transistor comprises a second gate electrode 8B having a plurality of second fingers 8BX, a plurality of second drain electrodes 9B, and a plurality of second source electrodes 10B. The semiconductor device further comprises a drain pad 15 that is provided above or below the plurality of first drain electrodes and is connected thereto, a source pad 25 that is provided above or below the plurality of second source electrodes and is connected thereto, and a common pad 35 connected to the plurality of first source electrodes and the plurality of second drain electrodes. <P>COPYRIGHT: (C)2012,JPO&INPIT |
