发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
It is an object of an embodiment of the present invention to reduce leakage current between a source and a drain in a transistor including an oxide semiconductor. As a first gate film in contact with a gate insulating film, a compound conductor which includes indium and nitrogen and whose band gap is less than 2.8 eV is used. Since this compound conductor has a work function of greater than or equal to 5 eV, preferably greater than or equal to 5.5 eV, the electron concentration in an oxide semiconductor film can be maintained extremely low. As a result, the leakage current between the source and the drain is reduced.
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申请公布号 |
US2012097942(A1) |
申请公布日期 |
2012.04.26 |
申请号 |
US201113274512 |
申请日期 |
2011.10.17 |
申请人 |
IMOTO YUKI;MARUYAMA TETSUNORI;OMATA TAKATSUGU;NONAKA YUSUKE;HONDA TATSUYA;MIYANAGA AKIHARU;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
IMOTO YUKI;MARUYAMA TETSUNORI;OMATA TAKATSUGU;NONAKA YUSUKE;HONDA TATSUYA;MIYANAGA AKIHARU |
分类号 |
H01L29/786;H01L21/34 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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