Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce a need for manufacturing methods such as deep dopant implants.
申请公布号
WO2012006094(A3)
申请公布日期
2012.04.26
申请号
WO2011US42196
申请日期
2011.06.28
申请人
MICRON TECHNOLOGY, INC.;TANG, SANH, D.;ZAHURAK, JOHN, K.;VIOLETTE, MICHAEL, P.
发明人
TANG, SANH, D.;ZAHURAK, JOHN, K.;VIOLETTE, MICHAEL, P.
