| 摘要 |
An enhancement mode (E-mode) HEMT is provided that can be used for analog and digital applications. In a specific embodiment, the HEMT can be an AlN/GaN HEMT. The subject E-mode device can be applied to high power, high voltage, high temperature applications, including but not limited to telecommunications, switches, hybrid electric vehicles, power flow control and remote sensing. According to an embodiment of the present invention, E-mode devices can be fabricated by performing an oxygen plasma treatment with respect to the gate area of the HEMT. The oxygen plasma treatment can be, for example, an O2 plasma treatment. In addition, the threshold voltage of the E-mode HEMT can be controlled by adjusting the oxygen plasma exposure time. By using a masking layer protecting regions for depletion mode (D-mode) devices, D-mode and E-mode devices can be fabricated on a same chip. |
