COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, WHICH CONTAINS FLUORINE-CONTAINING ADDITIVE

摘要

[Problem] To provide a composition for forming a resist underlayer film for lithography applications, which can be used for forming a resist underlayer film that can be used as a hard mask capable of improving coating performance and the shape of a pattern. [Solution] The composition for forming a resist underlayer film for lithography applications comprises (I) a fluorine-containing hyperblanched polymer which is produced by polymerizing, as components, a monomer (A) having at least two radically polymerizable double bonds in the molecule, a monomer (B) having a fluoroalkyl group and at least one radically polymerizable double bond in the molecule and a monomer (D) having a silicon-atom-containing organic group and at least one radically polymerizable double bond in the molecule with one another in the presence of a polymerization initiator (C) in an amount of 5 to 200 mol% inclusive relative to the total molar amount of the monomers (A), (B) and (D) and (II) a silicon-containing compound which comprises, as a component, a hydrolysable silane compound, a hydrolysate of the compound, a hydrolysis-condensation product of the compound or a combination thereof.