| 摘要 |
<P>PROBLEM TO BE SOLVED: To double the number of semiconductor devices to be manufactured from one substrate for manufacturing semiconductor device as compared with prior art, by obtaining a substrate for manufacturing semiconductor device where a plating layer becoming the terminals for a semiconductor device is formed on both surfaces of a metal plate. <P>SOLUTION: Terminals for a plurality of semiconductor devices are formed, as a plating layer, on the surface of a metal layer and when a semiconductor device is manufactured, a plurality of semiconductor elements are mounted and resin sealed and then only the metal plate is peeled off to leave the plating layer on the resin sealed body. In such a substrate for manufacturing semiconductor device, the plating layers 2, 3 for individual semiconductor devices are formed on both surfaces of the metal plate 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
