| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a distance sensor and a distance image sensor capable of achieving high-speed transfer of electric charges while enhancing the sensitivity. <P>SOLUTION: A photogate electrode PG has first and second long sides LS1 and LS2 which are opposed to each other, and first and second short sides SS1 and SS2 opposed to each other, and has a rectangular planar shape. First and second semiconductor regions FD1 and FD2 are arranged on both sides of the photogate electrode PG in the opposite direction of the first and second long sides LS1 and LS2 so as to be opposed to each other. Third semiconductor regions SR1 are arranged on both sides of the photogate electrode PG in the opposite direction of the first and second short sides SS1 and SS2 so as to be opposed to each other. In the third semiconductor regions SR1, a potential on the first and second short sides SS1 and SS2 side is set to be higher than a potential in a region located between the first and second semiconductor regions FD1 and FD2 in a region immediately under the photogate electrode PG. <P>COPYRIGHT: (C)2012,JPO&INPIT |
