发明名称 |
METHOD OF OPERATING A PHASE-CHANGE MEMORY DEVICE |
摘要 |
A method of operating a phase-change memory device including a phase-change layer and a unit applying a voltage to the phase-change layer is provided. The method includes applying a reset voltage to the phase-change layer, wherein the reset voltage includes at least two pulse voltages which are continuously applied. |
申请公布号 |
US2012099371(A1) |
申请公布日期 |
2012.04.26 |
申请号 |
US201213343383 |
申请日期 |
2012.01.04 |
申请人 |
KIM CHEOL-KYU;KHANG YOON-HO;KIM KI-JOON |
发明人 |
KIM CHEOL-KYU;KHANG YOON-HO;KIM KI-JOON |
分类号 |
G11C11/21 |
主分类号 |
G11C11/21 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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