| 摘要 |
<p>PURPOSE: A load lock chamber, a single crystal film deposition apparatus having the same, and a method for depositing a single crystal film on a wafer are provided to reduce manufacturing costs without having a separate apparatus for annealing a wafer. CONSTITUTION: A load lock chamber(120) is connected to a processing chamber in which an epitaxial growth is performed. A plurality of wafers is mounted on a holder(121). A gas supply part(122) supplies an ambient gas to the inside of the load lock chamber. A heating part heats a wafer by heating an annealing tube. A pumping part(125) pumps the inside of the load lock chamber. The wafer is heated and annealed under the ambient gas.</p> |
