SEMICONDUCTOR DEVICE FOR INCLUDING BURIED CHANNEL ARRAY TRANSISTORS

摘要

PURPOSE: A semiconductor device for including a buried channel array transistor is provided to expand a contact area mutually overlapped by interposing a storage contact pad between an active area and a storage contact plug. CONSTITUTION: Gates define source regions and drain regions in active areas wile being crossed with the active areas. An inter-layer insulating film is formed on a substrate(110). Bit line contact plugs(340c) touches with the drain regions passing through the inter-layer insulating film. First bit line structures and second bit line structures are formed on the inter-layer insulating film. The first bit line structures include a first bit line spacer(380x) covering up a first bit line conductive pattern and the sidewall of the first bit line conductive pattern.