发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature.
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申请公布号 |
KR101139369(B1) |
申请公布日期 |
2012.04.26 |
申请号 |
KR20100073877 |
申请日期 |
2010.07.30 |
申请人 |
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发明人 |
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分类号 |
H01L21/316;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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