发明名称 High-power semiconductor module with a base module and a connection module
摘要 #CMT# #/CMT# The module has base module and base plate (10) that positioned on semiconductor component by insulation device (12). The insulation device is electrically insulated with duct element (14a). A primary contact unit (24a) is provided for electrically contacting duct element and secondary contact unit (26a) is provided for electrically contacting power semiconductor component (16). A link assembly (40) is provided in which contact units of semiconductor components (4a,4b) are electrically in contact with each other. #CMT# : #/CMT# An independent claim is included for method for manufacturing power semiconductor module. #CMT#USE : #/CMT# Power semiconductor module. #CMT#ADVANTAGE : #/CMT# The manufacturing cost of power semiconductor module can be reduced. The connection of multiple components in power semiconductor module can be performed effectively. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows the schematic view of the power semiconductor module. 4a,4b : Semiconductor components 10 : Base plate 12 : Insulation device 14a,14b : Duct element 24a,24b : Primary contact unit 26a,26b : Secondary contact unit 40 : Link assembly.
申请公布号 EP2437294(A3) 申请公布日期 2012.04.25
申请号 EP20110176889 申请日期 2011.08.09
申请人 SEMIKRON ELEKTRONIK GMBH & CO. KG PATENTABTEILUNG 发明人 STOCKMEIER, THOMAS;GOEBL, CHRISTIAN;KRONEDER, CHRISTIAN
分类号 H01L25/07 主分类号 H01L25/07
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