| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure method that achieves optimum exposure distribution conditions in photolithography on a three-dimensional form. <P>SOLUTION: The photolithography on a three-dimensional form is characterized in that: height positions A, B, C and film thickness distribution of a resist are divided into two-dimensional matrixes; and exposure is carried out by operating at least one of vertical movement of the focus of an optical system, vertical movement of a substrate and movement except for vertical movement according to the substrate form and by employing a focus height according to exposure heights A', B', C' and an exposure light dose according to the resist thickness in each matrix without using a photomask. <P>COPYRIGHT: (C)2007,JPO&INPIT |
