发明名称
摘要 An method of and apparatus (10) for performing laser thermal processing (LTP) of a workpiece (74) having one or more workpiece fields (78). The apparatus includes a pulsed, solid state laser light source (14) having more than 1000 spatial modes (M) and capable of emitting one or more pulses of radiation with a temporal pulse length between 1 nanosecond and 1 microsecond, a workpiece stage (70) for supporting the workpiece, and an illumination optical system having an exposure field (64). The system is arranged between the laser light source and the workpiece stage so as to illuminate within the exposure field at least one of the one or more workpiece fields with the one or more pulses of radiation, with an irradiance uniformity of less than ±5%. The method and apparatus is particularly well-suited for LTP processing of workpieces which require a single pulse or only a few pulses of high-irradiance radiation. Other applications of the present invention include rapid thermal annealing of semiconductor devices in semiconductor device manufacturing and processing, recording information in storage media, and, in general, conditioning surfaces.
申请公布号 JP4921673(B2) 申请公布日期 2012.04.25
申请号 JP20010560735 申请日期 2000.12.28
申请人 发明人
分类号 H01L21/268;B23K26/00;B23K26/06;B23K26/073;B23K26/08 主分类号 H01L21/268
代理机构 代理人
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