| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an EUV exposure mask for leaving a buffer film, in which a pattern defect of an absorbing film is corrected and deterioration of a reflection rate is prevented, and to provide a pattern forming method employing this mask. <P>SOLUTION: The pattern defect of the absorbing film 4 is corrected, and then, the line width of the absorbing film 4 of a portion adjacent in a horizontal direction of the pattern defect is made narrow. By focused ion beam to be used as a pattern defect correcting means, ions are implanted into the buffer film 3 of the portion where the pattern defect is corrected. The line width of the pattern of the absorbing film 4 adjacent to a pattern defect correcting portion is made narrow, thereby improving the reflection rate. <P>COPYRIGHT: (C)2008,JPO&INPIT |
