| 摘要 |
High power transistors are provided. The transistors include a source region (13), a drain region (17) and a gate contact (24). The gate contact (24) is positioned between the source region (13) and the drain region (17). First and second ohmic contacts (20,22) are provided on the source and drain regions (13,17), respectively. The first and second ohmic contacts (20,22) respectively define a source contact (20) and a drain contact (22). The source contact (20) and the drain contact (22) have respective first and second widths. The first and second widths are different. Related methods of fabricating transistors are also provided. |
