| 摘要 |
1,181,101. Semi-conductor devices. SIEMENS A.G. 10 Feb., 1967 [11 Feb., 1966], No. 6454/67. Heading HIK. [Also in Division C7] Semi-conductors such as Si, Ge, A<SP>111</SP>B<SP>V</SP>, A<SP>II</SP>B<SP>VI</SP> and A<SP>IV</SP>B<SP>VI</SP> compounds are epitaxially deposited in monocrystalline form from the gas phase or liquid melt on to a carrier made of a compound crystallizing in accordance with the spinel type AB 2 C 4 and which has ferromagnetic or ferrimagnetic properties. The carrier may first be coated with Pt, Au, Cu, Ni or As by vapour deposition (see Divisions C6-C7). The process may be used to produce the semi-conductor arrangements shown in Figs. 3 and 4. A layer 10 of Si deposited on spinel carrier 3 is divided into separate regions in which transistor 11 and diode 12 as capacitor are formed. The regions are insulated from one another by an etched pit 13 and a spiral coil 14 of e.g. Fe is vapourized on to the base of the pit and connected to diode 12 and transistor 11 by leads 15 and 16. Leads 17, 18 and 19 serve as connections for further components.
|
