Kontaktbelichtungsmaske für die selektive Belichtung von Fotolackschichten für Halbleiterzwecke

摘要

1,210,140. Photo-masks. SIEMENS A.G. Dec. 11, 1968 [Dec. 12, 1967], No. 58793/68. Heading G2M. Photo-masks for the contact exposure of photoresists in the manufacture of semi-conductors comprise, in order, (i) a hard transparent substrate, optionally (ii) a harder layer, (iii) a metal image, and (iv) a hard transparent overcoating not more than 3 Á thick. The hard transparent materials may be quartz, SiO 2 , Al 2 O 3 , Si C, Be O or hardened glass, and layer (ii) may consist of quartz. The metal image may be Cr, Mo or Al and formed by a photo-resist technique.