发明名称 PATTERN FORMING METHOD, USE OF A CHEMICAL AMPLIFICATION RESIST COMPOSITION IN SAID METHOD
摘要 <p>A pattern forming method, including: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using a developer containing an organic solvent, wherein the chemical amplification resist composition contains: (A) a resin capable of decreasing a solubility of the resin (A) in the developer containing an organic solvent by an action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a basic, compound or ammonium salt compound whose basicity decreases upon irradiation with an actinic ray or radiation, and a resist composition used for the pattern forming method and a resist film formed from the resist composition are provided.</p>
申请公布号 EP2443513(A1) 申请公布日期 2012.04.25
申请号 EP20100789599 申请日期 2010.06.14
申请人 FUJIFILM CORPORATION 发明人 ENOMOTO, YUCHIRO;KAMIMURA, SOU;TARUTANI, SHINJI
分类号 G03F7/038;C07C309/06;C07C309/17;C07C311/48;C07C317/04;C07C381/12;G03F7/004;G03F7/039;G03F7/20;G03F7/32;H01L21/027 主分类号 G03F7/038
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