发明名称 |
PATTERN FORMING METHOD, USE OF A CHEMICAL AMPLIFICATION RESIST COMPOSITION IN SAID METHOD |
摘要 |
<p>A pattern forming method, including: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using a developer containing an organic solvent, wherein the chemical amplification resist composition contains: (A) a resin capable of decreasing a solubility of the resin (A) in the developer containing an organic solvent by an action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a basic, compound or ammonium salt compound whose basicity decreases upon irradiation with an actinic ray or radiation, and a resist composition used for the pattern forming method and a resist film formed from the resist composition are provided.</p> |
申请公布号 |
EP2443513(A1) |
申请公布日期 |
2012.04.25 |
申请号 |
EP20100789599 |
申请日期 |
2010.06.14 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
ENOMOTO, YUCHIRO;KAMIMURA, SOU;TARUTANI, SHINJI |
分类号 |
G03F7/038;C07C309/06;C07C309/17;C07C311/48;C07C317/04;C07C381/12;G03F7/004;G03F7/039;G03F7/20;G03F7/32;H01L21/027 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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