| 摘要 |
<p>A silicon carbide manufacturing device includes a graphite crucible (1), in which a seed crystal (9) is disposed, a gas-inducing pipe (3) coupled with the graphite crucible (1), and an attachment prevention apparatus (4). The gas-inducing pipe (3) has a column-shaped hollow part, through which a source gas flows into the graphite crucible (1). The attachment prevention apparatus (4) includes a rod (16) extending to a flow direction of the source gas, and a revolving and rotating element (12-15, 17) for revolving the rod (16) along an inner wall of the gas-inducing pipe (3) while rotating the rod (16) on an axis of the rod (16) in parallel to the flow direction.</p> |
