| 摘要 |
A manufacturing method of a solid-state imaging apparatus, wherein the solid-state imaging apparatus comprises a photoelectric conversion element, a transfer gate electrode, a second semiconductor region, an element isolation region, and a wiring, arranged on the element isolation region, wherein the manufacturing method comprises a step of forming the second semiconductor region, by injecting an impurity ion, through a mask covering the wiring and the element isolation region and extending from the element isolation region to a part of an activation region, into a portion of the activation region not covered with the mask. |
