| 摘要 |
<p>A solid-state image sensor according to the present invention includes: a semiconductor layer 7, which has a first surface and a second surface that is opposite to the first surface; a photosensitive cell array, which has been formed in the semiconductor layer 7 to receive light through both of the first and second surfaces; and at least one dispersive element array, which is arranged on the same side as at least one of the first and second surfaces so as to face the photosensitive cell array. The photosensitive cell array includes first and second photosensitive cells 2a and 2b. And the dispersive element array makes light rays falling within mutually different wavelength ranges incident on the first and second photosensitive cells 2a and 2b, respectively.</p> |
