发明名称 METHOD OF MANUFACTURING A HOLE TRANSPORT LAYER WITH P-DOPING
摘要 A material for a hole transport layer has a p-dopant. The dopant forms with the hole transport material a charge transfer complex. A metal component in solution is processed with the hole transport matrix material in solution to form the hole transport layer.
申请公布号 EP2443680(A1) 申请公布日期 2012.04.25
申请号 EP20100719327 申请日期 2010.05.05
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 HERDER, SABINE;SCHMID, GUENTER;SUHONEN, RIIKKA;HARTMANN, DAVID;MALTENBERGER, ANNA;SARFERT, WIEBKE
分类号 H01L51/00;H01L51/50;H01L51/54 主分类号 H01L51/00
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