发明名称 |
Plasma enhanced atomic layer deposition system and method |
摘要 |
A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate. |
申请公布号 |
US8163087(B2) |
申请公布日期 |
2012.04.24 |
申请号 |
US20050094461 |
申请日期 |
2005.03.31 |
申请人 |
FAGUET JACQUES;CERIO, JR. FRANK M.;MATSUDA TSUKASA;YAMAMOTO KAORU;TOKYO ELECTRON LIMITED |
发明人 |
FAGUET JACQUES;CERIO, JR. FRANK M.;MATSUDA TSUKASA;YAMAMOTO KAORU |
分类号 |
C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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