发明名称 |
Semiconductor device and method of forming no-flow underfill material around vertical interconnect structure |
摘要 |
A semiconductor device is made by forming a conductive layer over a first sacrificial carrier. A solder bump is formed over the conductive layer. A no-flow underfill material is deposited over the first carrier, conductive layer, and solder bump. A semiconductor die or component is compressed into the no-flow underfill material to electrically contact the conductive layer. A surface of the no-flow underfill material and first solder bump is planarized. A first interconnect structure is formed over a first surface of the no-flow underfill material. The first interconnect structure is electrically connected to the solder bump. A second sacrificial carrier is mounted over the first interconnect structure. A second interconnect structure is formed over a second side of the no-flow underfill material. The second interconnect structure is electrically connected to the first solder bump. The semiconductor devices can be stacked and electrically connected through the solder bump.
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申请公布号 |
US8163597(B2) |
申请公布日期 |
2012.04.24 |
申请号 |
US20090410312 |
申请日期 |
2009.03.24 |
申请人 |
HUANG RUI;KUAN HEAP HOE;LIN YAOJIAN;CHOW SENG GUAN;STATS CHIPPAC, LTD. |
发明人 |
HUANG RUI;KUAN HEAP HOE;LIN YAOJIAN;CHOW SENG GUAN |
分类号 |
H01L21/44;H01L21/48 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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