<p>A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.</p>
申请公布号
CA2663382(C)
申请公布日期
2012.04.24
申请号
CA20072663382
申请日期
2007.09.21
申请人
SAINT-GOBAIN CERAMICS & PLASTICS, INC.
发明人
TATARTCHENKO, VITALI;JONES, CHRISTOPHER D.;ZANELLA, STEVEN A.;LOCHER, JOHN W.;PRANADI, FERY
