发明名称 Power source circuit
摘要 A semiconductor device is provided, which comprises a rectifier circuit configured to generate a first voltage from a first signal inputted from an input terminal, a comparing circuit configured to compare a reference voltage and the first voltage inputted from the rectifier circuit and to output a second signal to a switch, and a voltage generation circuit configured to generate a second voltage from the first signal inputted from the input terminal. The rectifier circuit includes a transistor including at least a control terminal, and the voltage generation circuit inputs the second voltage to the control terminal when the switch is turned on in accordance with the second signal.
申请公布号 US8164933(B2) 申请公布日期 2012.04.24
申请号 US20080051473 申请日期 2008.03.19
申请人 FUJITA MASASHI;KATO KIYOSHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 FUJITA MASASHI;KATO KIYOSHI
分类号 H02M7/217 主分类号 H02M7/217
代理机构 代理人
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