发明名称 |
SONOS type stacks for nonvolatile change trap memory devices and methods to form the same |
摘要 |
A method for fabricating a nonvolatile charge trap memory device is described. The method includes forming a first oxide layer on a surface of a substrate. The first oxide layer is exposed to a first decoupled plasma nitridation process having a first bias. Subsequently, a charge-trapping layer is formed on the first oxide layer. The charge-trapping layer is exposed to an oxidation process and then to a second decoupled plasma nitridation process having a second, different, bias. |
申请公布号 |
US8163660(B2) |
申请公布日期 |
2012.04.24 |
申请号 |
US20090413389 |
申请日期 |
2009.03.27 |
申请人 |
PUCHNER HELMUT;POLISHCHUK IGOR;LEVY SAGY;CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
PUCHNER HELMUT;POLISHCHUK IGOR;LEVY SAGY |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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